Invention Grant
- Patent Title: Substrate treating method
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Application No.: US15854011Application Date: 2017-12-26
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Publication No.: US10941492B2Publication Date: 2021-03-09
- Inventor: Yuji Tanaka , Chisayo Nakayama , Masahiko Harumoto , Masaya Asai , Yasuhiro Fukumoto , Tomohiro Matsuo , Takeharu Ishii
- Applicant: SCREEN Holdings Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Ostrolenk Faber LLP
- Priority: JPJP2017-025227 20170214
- Main IPC: C23C16/56
- IPC: C23C16/56 ; H01L21/687 ; H01L21/67 ; C23C16/44
Abstract:
Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of performing exhaust of gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, and a heat treating step of performing the heat treatment of the substrate in the heat treating space.
Public/Granted literature
- US20180230599A1 SUBSTRATE TREATING METHOD Public/Granted day:2018-08-16
Information query
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