Invention Grant
- Patent Title: Nanoscale magnetic tunnel junction arrays for sub-micrometer resolution pressure sensor
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Application No.: US16196801Application Date: 2018-11-20
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Publication No.: US10942072B2Publication Date: 2021-03-09
- Inventor: Chandrasekharan Kothandaraman , Eric Raymond Evarts , Virat Vasav Mehta , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: G01L1/12
- IPC: G01L1/12 ; H01L41/47 ; H01L41/12

Abstract:
A sub-micrometer pressure sensor including a multilayered magnetic tunnel junction (MTJ) pillar containing a magnetostrictive material layer above or below a magnetic free layer of the multilayered MTJ pillar is provided. Advanced patterning allows for scaling of the multilayered MTJ pillar down to 25 nm or below which enables the formation of a large array of extremely high resolution pressure sensors. By varying the thickness of the magnetostrictive material layer, the sensitivity of the pressure sensor can be fine tuned. Unique magnetostrictive materials in the multilayered MTJ pillar will alter the device current with the input of external pressure. Furthermore, unique arrays with much smaller critical elements can be organized in differential sensing arrangements of the multilayered MTJ pillar with pressure sensing capability that can outperform current piezoelectric based pressure sensing arrays.
Public/Granted literature
- US20200158582A1 NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLUTION PRESSURE SENSOR Public/Granted day:2020-05-21
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