Invention Grant
- Patent Title: Composite oxide semiconductor, semiconductor device using the composite oxide semiconductor, and display device including the semiconductor device
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Application No.: US16087685Application Date: 2017-03-21
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Publication No.: US10942408B2Publication Date: 2021-03-09
- Inventor: Shunpei Yamazaki
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2016-074398 20160401
- International Application: PCT/IB2017/051614 WO 20170321
- International Announcement: WO2017/168283 WO 20171005
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; G02F1/1368 ; H01L29/24 ; H01L51/50 ; G06F3/044 ; G06F3/041
Abstract:
A novel composite oxide semiconductor which can be used in a transistor including an oxide semiconductor film is provided. In the composite oxide semiconductor, a first region and a second region are mixed. The first region includes a plurality of first clusters containing In and oxygen as main components. The second region includes a plurality of second clusters containing Zn and oxygen as main components. The plurality of first clusters have portions connected to each other. The plurality of second clusters have portions connected to each other.
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