Invention Grant
- Patent Title: Manufacturing method of semiconductor chip, and kit
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Application No.: US16370279Application Date: 2019-03-29
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Publication No.: US10942455B2Publication Date: 2021-03-09
- Inventor: Tetsuya Kamimura
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2016-193257 20160930
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G03F7/32 ; H01L21/027 ; G03F7/20 ; G03F7/038 ; G03F7/039 ; H01L21/768 ; H01L21/311 ; H01L21/32 ; H01L21/321 ; G03F7/16 ; H01L21/3205 ; G03F7/075 ; H01L21/28 ; G03F7/40 ; B24B37/00 ; H01L21/304 ; H01L21/3065

Abstract:
The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.
Public/Granted literature
- US20190227440A1 MANUFACTURING METHOD OF SEMICONDUCTOR CHIP, AND KIT Public/Granted day:2019-07-25
Information query
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