Invention Grant
- Patent Title: Spintronic devices with narrow spin polarization layers
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Application No.: US16836687Application Date: 2020-03-31
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Publication No.: US10943611B1Publication Date: 2021-03-09
- Inventor: James Mac Freitag , Zheng Gao , Susumu Okamura , Yongchul Ahn , Aron Pentek , Amanda Baer
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven H. Versteeg
- Main IPC: G11B5/235
- IPC: G11B5/235 ; G11B5/31 ; G11B5/127 ; G11B5/39 ; G11B5/02 ; G11B5/00 ; G11B5/23

Abstract:
In one embodiment, a write head includes a spin polarization layer (SPL) over a seed layer. A spacer layer is over the SPL. A trailing shield is over the spacer layer. The spacer layer forms a first interface between the spacer layer and the trailing shield and forms a second interface between the spacer layer and the SPL. The first interface has an area larger than an area of the second interface. In another embodiment, a write head includes a SPL over a spacer layer. A capping layer is over the SPL. A trailing shield is over the capping layer. The spacer layer forms a first interface between the spacer layer and the main pole and forms a second interface between the spacer layer and the SPL. The first interface has an area larger than an area of the second interface.
Information query
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