Invention Grant
- Patent Title: Ultra low VDD memory cell with ratioless write port
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Application No.: US16785153Application Date: 2020-02-07
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Publication No.: US10943648B1Publication Date: 2021-03-09
- Inventor: Lee-Lean Shu , Patrick Chuang , Chao-Hung Chang
- Applicant: GSI Technology, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: GSI Technology, Inc.
- Current Assignee: GSI Technology, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: DLA Piper LLP (US)
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; H03K19/0944 ; G11C11/412
Abstract:
An ultra low VDD memory cell has a ratioless write port. In some embodiments, the VDD operation level can be as low as the threshold voltage of NMOS and PMOS transistors of the cell.
Information query
