A storage device according to the present disclosure includes: a plurality of first wiring lines extending in a first direction and including a plurality of first selection lines and a plurality of second selection lines; a plurality of second wiring lines extending in a second direction and including a plurality of third selection lines and a plurality of fourth selection lines, the second direction intersecting the first direction; a plurality of first memory cells; a first driver including a first selection line driver that drives the plurality of first selection lines on a basis of a first selection control signal and a second selection line driver that drives the plurality of second selection lines on a basis of the first selection control signal, the first and second selection line drivers being arranged side-by-side in the first direction; and a second driver including a third selection line driver that drives the plurality of third selection lines on a basis of a second selection control signal and a fourth selection line driver that drives the plurality of fourth selection lines on a basis of the second selection control signal, the third and fourth selection line drivers being arranged side-by-side in the second direction.