A 68Ge/68Ga generator for a continuous production of a 68Ga daughter nuclide, wherein the 68Ge parent nuclide thereof is specifically adsorbed to an inorganic support material and wherein said 68Ge parent nuclide continuously decays to 68Ga by electron capture at a half-life of 270.82 d, wherein the inorganic support material is at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum. The use of at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum as an inorganic support material for the manufacture of a 68Ge/68Ga generator for pharmaceutical purposes. With the inorganic support material of the present invention, it is possible to load 68Ge/68Ga generators with up to 8000 MBq of 68Ge (corresponding to 80 μg Germanium).