Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
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Application No.: US16427299Application Date: 2019-05-30
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Publication No.: US10943783B2Publication Date: 2021-03-09
- Inventor: Cheng-Che Chung , Yi Jen Tsai , Ching-Sen Kuo , Tsai-Ming Huang , Jieh-Jang Chen , Feng-Jia Shiu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G03F7/20 ; H01L21/027 ; H01L21/768 ; G03F7/32 ; H01L21/3105
Abstract:
In a method of manufacturing a semiconductor device, a first layer having an opening is formed over a substrate. A second layer is formed over the first layer and the substrate. A photo resist pattern is formed over the second layer above the opening of the first layer. The photo resist pattern is reflowed by a thermal process. An etch-back operation is performed to planarize the second layer.
Public/Granted literature
- US20200075318A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2020-03-05
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