According to one embodiment, a device includes: a semiconductor in a first region of interconnects stacked in a first direction; a first conductor including a first body and a first protrusion, the first body provided in a first region, the first protrusion protruding from the first body in a second direction and overlapping with a second region adjacent to the first region in the second direction; a plug on the first protrusion; a insulator between the plug and the interconnects; a second conductor including a second body and a second protrusion, the second body on the first body and contacting the semiconductor, and the second protrusion on the first protrusion and protruding to the second body; and a first layer on the first protrusion, contacting the second protrusion and the insulator, and extending between the second protrusion and the insulator.