Invention Grant
- Patent Title: Semiconductor device structure comprising a plurality of metal oxide fibers and method for forming the same
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Application No.: US16213788Application Date: 2018-12-07
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Publication No.: US10943873B2Publication Date: 2021-03-09
- Inventor: Jing-Cheng Lin , Chen-Hua Yu , Szu-Wei Lu , Yen-Yao Chi
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/02 ; H01L23/31 ; H01L21/56 ; H01L21/768 ; H01L21/3205 ; H01L21/48 ; H01L23/528 ; H01L23/538 ; H01L25/10 ; H01L33/62 ; H01L23/532 ; H01L25/00 ; H01L23/525
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a conductive structure over the substrate. The semiconductor device structure includes first metal oxide fibers over the conductive structure. The semiconductor device structure includes a dielectric layer over the substrate and covering the conductive structure and the first metal oxide fibers. The dielectric layer fills gaps between the first metal oxide fibers.
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