Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16876813Application Date: 2020-05-18
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Publication No.: US10943889B2Publication Date: 2021-03-09
- Inventor: Hsien-Wei Chen , Ying-Ju Chen , An-Jhih Su , Jie Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L25/065 ; H01L25/00 ; H01L25/10 ; H01L25/16 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device and method that utilize a surface device are provided. In an embodiment a fuse line comprises an underbump metallization which has two separate, electrically isolated parts. The two parts are bridged by an external connector, such as a solder ball in order to electrically connect the surface device. When, after testing, the surface device is determined to be defective, the fuse line may be disconnected by removing the external connector from the two separate parts, electrically isolating the surface device. In another embodiment the surface is located beneath a package within an integrated fan out package or is part of a multi-fan out package.
Public/Granted literature
- US20200279833A1 Semiconductor Device and Method of Manufacture Public/Granted day:2020-09-03
Information query
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