Invention Grant
- Patent Title: Method for producing a semiconductor component having a channel stopper region
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Application No.: US16227854Application Date: 2018-12-20
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Publication No.: US10943974B2Publication Date: 2021-03-09
- Inventor: Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017130928 20171221
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/225 ; H01L21/78 ; H01L21/265 ; H01L21/266 ; H01L21/02 ; H01L29/66 ; H01L29/739 ; H01L29/78
Abstract:
A channel stopper region extending from a first main surface into a component layer of a first conductivity type is formed in an edge region of a component region, the edge region being adjacent to a sawing track region. Afterward, a doped region extending from the first main surface into the component layer is formed in the component region. The channel stopper region is formed by a photolithographic method that is carried out before a first photolithographic method for introducing dopants into a section of the component region outside the channel stopper region.
Public/Granted literature
- US20190198610A1 Method for Producing a Semiconductor Component Having a Channel Stopper Region Public/Granted day:2019-06-27
Information query
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