Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having side-diffused trench plug
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Application No.: US16457500Application Date: 2019-06-28
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Publication No.: US10943975B2Publication Date: 2021-03-09
- Inventor: Ader Shen , Ting-Fung Chang , James Lu , Wayne Lin
- Applicant: Littelfuse, Inc.
- Applicant Address: US IL Chicago
- Assignee: Littelfuse, Inc.
- Current Assignee: Littelfuse, Inc.
- Current Assignee Address: US IL Chicago
- Agency: Kacvinsky Daisak Bluni PLLC
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L29/06 ; H01L21/76 ; H01L21/306 ; H01L21/3205 ; H01L21/324 ; H01L21/763 ; H01L21/768 ; H01L23/535 ; H01L29/861
Abstract:
A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.
Public/Granted literature
- US20190326390A1 SEMICONDUCTOR DEVICE HAVING SIDE-DIFFUSED TRENCH PLUG Public/Granted day:2019-10-24
Information query
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