Invention Grant
- Patent Title: Field effect transistor and process of forming the same
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Application No.: US16751787Application Date: 2020-01-24
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Publication No.: US10943999B2Publication Date: 2021-03-09
- Inventor: Ken Nakata
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: JPJP2017-186637 20170927
- Main IPC: H01L21/316
- IPC: H01L21/316 ; H01L29/778 ; H01L21/306 ; H01L21/02 ; H01L21/465 ; H01L21/443 ; H01L21/027 ; H01L29/267 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/20 ; H01L29/786 ; H01L21/8234 ; H01L29/45
Abstract:
A process of forming a field transistor (FET) and a FET are disclosed. The FET includes a nitride semiconductor stack on a substrate. A pair of n+-regions made of oxide semiconductor material are provided within respective recesses in the semiconductor stack. Protecting layers, each made of oxide material, cover peripheries of the n+-regions. Electrodes are provided in openings in the protecting layers to be in direct contact with the n+-regions.
Public/Granted literature
- US20200161465A1 FIELD EFFECT TRANSISTOR AND PROCESS OF FORMING THE SAME Public/Granted day:2020-05-21
Information query
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