Invention Grant
- Patent Title: Geometry tuning of fin based transistor
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Application No.: US16070262Application Date: 2016-03-30
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Publication No.: US10944006B2Publication Date: 2021-03-09
- Inventor: Glenn A. Glass , Anand S. Murthy , Karthik Jambunathan , Chandra S. Mohapatra , Hei Kam , Nabil G. Mistkawi , Jun Sung Kang , Biswajeet Guha
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/025070 WO 20160330
- International Announcement: WO2017/171759 WO 20171005
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/78 ; H01L21/8238 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L29/775 ; B82Y10/00 ; H01L29/08 ; H01L29/423 ; H01L27/092 ; H01L21/8258

Abstract:
A trench is formed in an insulating layer to expose a native fin on a substrate. A replacement fin is deposited on the native fin in the trench. The replacement fin is trimmed laterally.
Public/Granted literature
- US20190019891A1 GEOMETRY TUNING OF FIN BASED TRANSISTOR Public/Granted day:2019-01-17
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