Invention Grant
- Patent Title: Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
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Application No.: US16582547Application Date: 2019-09-25
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Publication No.: US10944009B2Publication Date: 2021-03-09
- Inventor: Pei-Hsun Wang , Chih-Chao Chou , Shih-Cheng Chen , Jung-Hung Chang , Jui-Chien Huang , Chun-Hsiung Lin , Chih-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L29/45 ; H01L29/66 ; H01L21/02 ; H01L21/285
Abstract:
The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate; an isolation structure at least partially surrounding the fin; an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, wherein an extended portion of the epitaxial S/D feature extends over the isolation structure; and a silicide layer disposed on the epitaxial S/D feature, the silicide layer continuously surrounding the extended portion of the epitaxial S/D feature over the isolation structure.
Information query
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