Invention Grant
- Patent Title: Integrated silicon controlled rectifier (SCR) and a low leakage SCR supply clamp for electrostatic discharge (ESP) protection
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Application No.: US15952466Application Date: 2018-04-13
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Publication No.: US10944257B2Publication Date: 2021-03-09
- Inventor: Radhakrishnan Sithanandam , Divya Agarwal , Jean Jimenez , Malathi Kar
- Applicant: STMicroelectronics International N.V. , STMicroelectronics SA
- Applicant Address: NL Schiphol; FR Montrouge
- Assignee: STMicroelectronics International N.V.,STMicroelectronics SA
- Current Assignee: STMicroelectronics International N.V.,STMicroelectronics SA
- Current Assignee Address: NL Schiphol; FR Montrouge
- Agency: Crowe & Dunlevy
- Main IPC: H02H9/02
- IPC: H02H9/02 ; H02H9/04 ; H01L27/02 ; H01L27/07 ; H01L29/06
Abstract:
Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated SCR device. The SCR device may include an embedded field effect transistor (FET) having an insulated gate that receives a trigger signal from an ESD detection circuit. The SCR device may alternatively include a variable substrate resistor having an insulated gate that receives a trigger signal from an ESD detection circuit.
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