Invention Grant
- Patent Title: Drive device for semiconductor element
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Application No.: US15918727Application Date: 2018-03-12
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Publication No.: US10944393B2Publication Date: 2021-03-09
- Inventor: Kenshi Terashima
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JPJP2017-051971 20170316
- Main IPC: H02H7/00
- IPC: H02H7/00 ; H03K17/14 ; H03K17/78 ; H03K17/082 ; H03K17/08

Abstract:
A drive device for a semiconductor element includes a drive circuit receiving from outside a pulsed drive signal for driving ON/OFF of the semiconductor element; and a protection circuit receiving a signal representing a chip temperature of the semiconductor element and, when the detected chip temperature exceeds an overheating threshold temperature, controlling operation of the drive circuit so as to adjust a drive control voltage that is provided to the semiconductor element; and a drive information output circuit externally outputting drive information corresponding to the adjusted drive control voltage that is provided to the semiconductor element by the drive circuit.
Public/Granted literature
- US20180269867A1 DRIVE DEVICE FOR SEMICONDUCTOR ELEMENT Public/Granted day:2018-09-20
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