- Patent Title: Solid-state image sensor with high-permittivity material film and a light shielding section, method for producing solid-state image sensor, and electronic apparatus
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Application No.: US16582203Application Date: 2019-09-25
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Publication No.: US10944930B2Publication Date: 2021-03-09
- Inventor: Tomohiro Ohkubo , Suzunori Endo
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2011-203337 20110916
- Main IPC: H04N5/374
- IPC: H04N5/374 ; H01L27/146 ; H01L27/148 ; H01L27/30
Abstract:
A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
Public/Granted literature
- US20200021764A1 SOLID-STATE IMAGE SENSOR, METHOD FOR PRODUCING SOLID-STATE IMAGE SENSOR, AND ELECTRONIC APPARATUS Public/Granted day:2020-01-16
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