- Patent Title: Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis
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Application No.: US15920905Application Date: 2018-03-14
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Publication No.: US10947638B2Publication Date: 2021-03-16
- Inventor: Takayuki Hirao , Makoto Iwai , Katsuhiro Imai , Takashi Yoshino
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya
- Agency: Flynn Thiel, P.C.
- Priority: JPJP2015-206078 20151020
- Main IPC: C30B19/12
- IPC: C30B19/12 ; C30B9/10 ; H01L21/02 ; C30B19/02 ; C30B25/18 ; C30B29/40 ; C30B33/12
Abstract:
An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm.
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