A method of singulating a wafer includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface. The method includes placing the wafer onto a carrier substrate. The method includes singulating the wafer through the spaces to form singulation lines after the placing the wafer on the carrier substrate, wherein singulating comprises stopping in proximity to the layer of material. The method includes applying a pressure to the entire wafer thereby separating the layer of material in the singulation lines, wherein applying the pressure comprises using a fluid. The method provide a way to batch separate layers of material disposed on wafers after singulating the wafers.