Invention Grant
- Patent Title: Bonding wire for semiconductor device
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Application No.: US15305238Application Date: 2015-04-21
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Publication No.: US10950570B2Publication Date: 2021-03-16
- Inventor: Tetsuya Oyamada , Tomohiro Uno , Hiroyuki Deai
- Applicant: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. , NIPPON MICROMETAL CORPORATION
- Applicant Address: JP Tokyo; JP Iruma
- Assignee: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.,NIPPON MICROMETAL CORPORATION
- Current Assignee: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.,NIPPON MICROMETAL CORPORATION
- Current Assignee Address: JP Tokyo; JP Iruma
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2014-087587 20140421
- International Application: PCT/JP2015/062040 WO 20150421
- International Announcement: WO2015/163297 WO 20151029
- Main IPC: B32B15/01
- IPC: B32B15/01 ; C25D5/24 ; H01L23/00 ; C22C9/06 ; C22C9/00 ; B23K35/30 ; B32B15/20

Abstract:
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices.
The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm.
The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm.
Public/Granted literature
- US20170040281A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE Public/Granted day:2017-02-09
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