Invention Grant
- Patent Title: Current source using emitter region as base region isolation structure
-
Application No.: US16383917Application Date: 2019-04-15
-
Publication No.: US10950601B2Publication Date: 2021-03-16
- Inventor: Geeng-Chuan Chern
- Applicant: Nexchip Semiconductor Corporation
- Applicant Address: CN Anhui
- Assignee: Nexchip Semiconductor Corporation
- Current Assignee: Nexchip Semiconductor Corporation
- Current Assignee Address: CN Anhui
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201910138997.X 20190225
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L29/08 ; H01L29/10 ; H01L29/732 ; H01L29/06 ; G05F3/26 ; H01L21/8222 ; H01L21/762 ; H01L21/285 ; H01L29/66 ; H01L29/45
Abstract:
A current source includes a substrate, a base region of a first doping type formed in the substrate, an emitter region of a second doping type formed in the substrate and surrounding the base region, a first collector region of the second doping type formed in the base region, and at least one second collector region of the second doping type formed in the base region, wherein the emitter region includes a deep-well portion and an extending portion, the deep-well portion situated beneath the base region, the extending portion laterally surrounding the base region, the extending portion joined at its bottom to the deep-well portion, the extending portion being flush at its top with a top surface of the substrate. A method of forming the current source is also disclosed.
Public/Granted literature
- US20200273859A1 CURRENT SOURCE AND METHOD OF FORMING SAME Public/Granted day:2020-08-27
Information query
IPC分类:
