Invention Grant
- Patent Title: Semiconductor memory device including phase change material layers and method for manufacturing thereof
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Application No.: US16585622Application Date: 2019-09-27
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Publication No.: US10950664B2Publication Date: 2021-03-16
- Inventor: Jau-Yi Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; G11C13/00 ; H01L29/786 ; H01L21/8234 ; H01L29/78 ; H01L23/00
Abstract:
A semiconductor memory device disposed over a substrate includes a common electrode, a selector material layer surrounding the common electrode, and a plurality of phase change material layers in contact with the selector material layer.
Public/Granted literature
- US20200035752A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING PHASE CHANGE MATERIAL LAYERS AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2020-01-30
Information query
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