Invention Grant
- Patent Title: Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
-
Application No.: US16407939Application Date: 2019-05-09
-
Publication No.: US10954439B2Publication Date: 2021-03-23
- Inventor: Tsukasa Torimoto , Tatsuya Kameyama , Hiroki Yamauchi , Chie Miyamae , Yuki Mori , Susumu Kuwabata , Taro Uematsu , Daisuke Oyamatsu
- Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
- Applicant Address: JP Nagoya; JP Suita; JP Anan
- Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM,OSAKA UNIVERSITY,NICHIA CORPORATION
- Current Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM,OSAKA UNIVERSITY,NICHIA CORPORATION
- Current Assignee Address: JP Nagoya; JP Suita; JP Anan
- Agency: Hunton Andrews Kurth LLP
- Priority: JPJP2018-091556 20180510,JPJP2018-156357 20180823,JPJP2018-211131 20181109
- Main IPC: C09K11/88
- IPC: C09K11/88 ; H01L33/50 ; F21K9/64 ; F21Y115/10 ; B82Y30/00 ; B82Y40/00
Abstract:
A method of producing semiconductor nanoparticles, semiconductor nanoparticles, and a light-emitting device are provided. The method includes heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in the range of above 200° C. to 370° C. In the method, the ratio of the number of Ag atoms to the total number of In and Ga atoms in the mixture is above 0.43 to 2.5. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. The light-emitting device includes a light conversion member containing the semiconductor nanoparticles and a semiconductor light-emitting element.
Information query
