Invention Grant
- Patent Title: Lithography system and method thereof
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Application No.: US16512811Application Date: 2019-07-16
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Publication No.: US10955750B2Publication Date: 2021-03-23
- Inventor: Wei-Chun Yen , Chi Yang , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G03B27/54
- IPC: G03B27/54 ; G03F7/20 ; H05G2/00 ; H01L21/027

Abstract:
A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
Public/Granted literature
- US20210018845A1 LITHOGRAPHY SYSTEM AND METHOD THEREOF Public/Granted day:2021-01-21
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