A method for fabricating caterpillar trenches for wafer dicing includes forming at least one opening within a mask formed on a substrate to protect an electronics device disposed on the substrate during isotropic etching, and isotropically etching through the at least one opening to form at least one wafer dicing channel, including laterally etching a collection of nested trenches including trenches each having a non-circular cross-section from a first surface of the substrate to a second surface of the substrate opposite the first surface.