Invention Grant
- Patent Title: Formation of semiconductor devices including electrically programmable fuses
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Application No.: US16664003Application Date: 2019-10-25
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Publication No.: US10957643B2Publication Date: 2021-03-23
- Inventor: Juntao Li , Chih-Chao Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent James Nock
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/768 ; H01L21/321 ; H01L21/288

Abstract:
A semiconductor device including an electrically programmable fuse includes a substrate, a first electrode on the substrate, dielectric material on the first electrode, one or more second electrodes including a conductive material disposed on the first electrode between portions of the dielectric material, and one or more voids encapsulated by the conductive material such that the one or more voids have boundaries defined in part by portions of the conductive material corresponding to fuse links disposed between the one or more voids and the dielectric material.
Public/Granted literature
- US20200058588A1 FORMATION OF SEMICONDUCTOR DEVICES INCLUDING ELECTRICALLY PROGRAMMABLE FUSES Public/Granted day:2020-02-20
Information query
IPC分类: