Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16849410Application Date: 2020-04-15
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Publication No.: US10957673B2Publication Date: 2021-03-23
- Inventor: Hiroshi Matsuyama
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: White & Case LLP
- Priority: JPJP2018-173126 20180914
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/49 ; H01L23/498 ; H01L23/538
Abstract:
A semiconductor device of an embodiment includes a metal layer; a semiconductor chip on the metal layer and having an upper electrode and a lower electrode; a first wiring board electrically connected to the upper electrode, and includes a first, a second, a third plate-shaped portion, the first plate-shaped portion being parallel to the second plate-shaped portion, and the third plate-shaped portion being connected to the first and the second plate-shaped portion; a second wiring board electrically connected to the metal layer, and includes a fifth, a sixth, and a seventh plate-shaped portion, the fifth plate-shaped portion being parallel to the sixth plate-shaped portion, and the seventh plate-shaped portion being connected to the fifth and the sixth plate-shaped portion. The first and the second plate-shaped portion are provided between the fifth and the sixth plate-shaped portion, and the semiconductor chip is positioned between the fifth and the sixth plate-shaped portion.
Public/Granted literature
- US20200243490A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-30
Information query
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