Invention Grant
- Patent Title: Resistance variation element, semiconductor device, and manufacturing method
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Application No.: US16470617Application Date: 2017-12-18
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Publication No.: US10957739B2Publication Date: 2021-03-23
- Inventor: Munehiro Tada
- Applicant: NEC Corporation
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JPJP2016-252480 20161227
- International Application: PCT/JP2017/045263 WO 20171218
- International Announcement: WO2018/123678 WO 20180705
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L21/8239 ; H01L45/00

Abstract:
Provided is a resistance variation element including a resistance variation film of a metal depositing type, a first electrode which contacts with a first surface of the resistance variation film in a predetermined first region and supplies metallic ions via the first region, and a second electrode laminated on a second surface of the resistance variation film. The first region includes a recessed region surrounded by a simple closed curve or a region surrounded by a plurality of simple closed curves. A line segment which passes through a point outside of the first region, ends of which exist on the simple closed curve, and each point of which in the vicinity of both the ends other than both the ends is outside of the first region, exists, and an edge of the first electrode is formed in a part of the simple closed curve including both the ends.
Public/Granted literature
- US20200020743A1 RESISTANCE VARIATION ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD Public/Granted day:2020-01-16
Information query
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