To improve the turn-off withstand capability of a semiconductor device. A semiconductor device is provided, including: a semiconductor substrate; an active portion that is provided in the semiconductor substrate and through which current flows between upper and lower surfaces of the semiconductor substrate; a transistor portion provided in the active portion; a diode portion provided in the active portion, and arrayed next to the transistor portion along a predetermined array direction in a top view of the semiconductor substrate; and an edge termination structure portion provided between a peripheral end of the semiconductor substrate and the active portion in the top view. In the top view, at at least part of the edge termination structure portion, which part facing the transistor portion in the direction of extension orthogonal to the array direction, a first-conductivity type first cathode region is provided in contact with the lower surface.