Invention Grant
- Patent Title: Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device
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Application No.: US16351699Application Date: 2019-03-13
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Publication No.: US10958042B2Publication Date: 2021-03-23
- Inventor: Kazuya Ohira , Hideto Furuyama
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Finnegan. Henderson, Farabow, Garrett & Dunner L.L.P.
- Priority: JPJP2018-175278 20180919
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/042 ; H01S5/343

Abstract:
According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.
Public/Granted literature
- US20200091683A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2020-03-19
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