Invention Grant
- Patent Title: Surface acoustic wave device, high-frequency module, and method of fabricating surface acoustic wave device
-
Application No.: US15814439Application Date: 2017-11-16
-
Publication No.: US10958231B2Publication Date: 2021-03-23
- Inventor: Kentaro Funahashi
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo
- Agency: Keating & Bennett, LLP
- Priority: JPJP2015-101308 20150518
- Main IPC: H03H3/08
- IPC: H03H3/08 ; H03H9/05 ; H03H9/25 ; H03H9/02

Abstract:
A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, a support layer, a cover layer, and a pillar-shaped electrode. The IDT electrode is provided on a main surface of the piezoelectric substrate. The support layer is disposed around a region where the IDT electrode is provided and has a larger height from the main surfaces than a height of the IDT electrode therefrom. The cover layer is disposed on the support layer and covers the IDT electrode. The pillar-shaped electrode is located on one of the main surfaces where the pillar-shaped electrode is in contact with the support layer. The pillar-shaped electrode is electrically connected to the IDT electrode. The pillar-shaped electrode includes a top surface and a side surface. Each of the top surface and the side surface includes a portion exposed to outside.
Public/Granted literature
Information query