Invention Grant
- Patent Title: Semiconductor structure and manufacturing method for the same
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Application No.: US16426575Application Date: 2019-05-30
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Publication No.: US10961114B2Publication Date: 2021-03-30
- Inventor: Ching-Kai Shen , Yi-Chuan Teng , Wei-Chu Lin , Hung-Wei Liang , Jung-Kuo Tu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
The present disclosure provides a semiconductor structure, including a sensing substrate, a capping substrate over the sensing substrate, the capping substrate having a first surface facing toward the sensing substrate and a second surface facing away from the sensing substrate, wherein the capping substrate comprises a through hole extending from the first surface to the second surface, a spacer between the sensing substrate and the capping substrate, the spacer, the sensing substrate, and the capping substrate forming a cavity connecting with the through hole, and a sealing structure at the second surface and aligning with the through hole, wherein the sealing structure comprises a metal layer and a dielectric layer.
Public/Granted literature
- US20200377362A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2020-12-03
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