Invention Grant
- Patent Title: Gate charge measurements using two source measure units
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Application No.: US16403387Application Date: 2019-05-03
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Publication No.: US10962585B2Publication Date: 2021-03-30
- Inventor: Alexander N. Pronin , Mary Anne Tupta
- Applicant: Keithley Instruments, LLC
- Applicant Address: US OH Solon
- Assignee: Keithley Instruments, LLC
- Current Assignee: Keithley Instruments, LLC
- Current Assignee Address: US OH Solon
- Agency: Miller Nash Graham & Dunn
- Agent Andrew J. Harrington
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/14

Abstract:
A testing environment includes a first measuring unit connected to a gate of a MOSFET device and a second measuring unit connected to a drain of the MOSFET device. The testing environment is particularly useful for testing gate charge for MOSFET devices. In a first phase, the gate of the device is driven with electrical current while the drain is driven with a constant voltage. As the MOSFET device turns on, the second measuring unit switches from providing the constant voltage to providing a constant current to the drain of the MOSFET, while measuring the drain voltage. The switching of modes is automatic and occurs without user intervention. After the MOSFET device has been driven to VgsMax by the gate current, all of the relevant data is stored, which may be analyzed and presented to a user in a User Interface or presented in other manner.
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