There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell, the memory including first and second tunnel junction elements each having a laminated structure including a reference layer with a fixed magnetization direction, a recording layer with a reversible magnetization direction, and an insulating layer sandwiched between the reference layer and the recording layer, a first selection transistor electrically connected to first ends of the first and second tunnel junction elements, a first wire electrically connected to a second end of the first tunnel junction element, and a second wire electrically connected to a second end of the second tunnel junction element.