Invention Grant
- Patent Title: Method for controlling resistive random-access memory
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Application No.: US16109802Application Date: 2018-08-23
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Publication No.: US10964384B2Publication Date: 2021-03-30
- Inventor: Tsai-Kan Chien , Lih-Yih Chiou , Jing-Cian Lin
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW104101202 20150114
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G06F11/10 ; G06F11/07 ; G11C7/04 ; G11C7/10

Abstract:
A method for controlling a resistive random access memory (ReRAM) is proposed. The method calculates a number of a bit value of a data when the data is to be written to the resistive random access memory. Each bit of the data is flipped and the data is written to the ReRAM if the number of the bit value is greater than a half of a length of the data. The data as it original is written to the ReRAM if the number of the bit value is less than a half of the length of the data.
Public/Granted literature
- US20180366187A1 METHOD FOR CONTROLLING RESISTIVE RANDOM-ACCESS MEMORY Public/Granted day:2018-12-20
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