Invention Grant
- Patent Title: Memory system, memory device and memory controller
-
Application No.: US16707959Application Date: 2019-12-09
-
Publication No.: US10964395B2Publication Date: 2021-03-30
- Inventor: Seung-Hwan Shin , Woong-Sik Shin
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Perkins Coie LLP
- Priority: KR10-2019-0039823 20190404
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/10 ; G11C16/32 ; G11C16/04

Abstract:
A memory system, a memory device, a memory controller and an operating method thereof. By issuing a first status check signal when a first delay time elapses since a first point in time at which a program operation for first memory cells corresponding to a first word line is started and by issuing a second status check signal when a second delay time different from the first delay time elapses since a second point in time at which a program operation for second memory cells corresponding to a second word line is started, it is possible to efficiently perform a status check operation related with a program operation of data.
Public/Granted literature
- US20200321056A1 MEMORY SYSTEM, MEMORY DEVICE AND MEMORY CONTROLLER Public/Granted day:2020-10-08
Information query