Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor device
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Application No.: US16594174Application Date: 2019-10-07
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Publication No.: US10964553B2Publication Date: 2021-03-30
- Inventor: Tetsuichiro Kasahara
- Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Applicant Address: JP Nagano
- Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee Address: JP Nagano
- Agency: Rankin, Hill & Clark LLP
- Priority: JPJP2018-192981 20181011
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L25/18 ; H01L23/367 ; H01L23/31 ; H01L23/00 ; H01L23/498

Abstract:
A manufacturing method of a semiconductor device includes mounting a semiconductor element on a first electrode disposed on a first surface of a substrate; preparing a metal plate including a main body part and a projection part; mounting the metal plate on the first surface side of the substrate, by joining the projection part to a second electrode that is disposed on the first surface of the substrate; sealing the semiconductor element and the projection part with a sealing resin; and forming an electrode terminal made of a base end part that is connected to the second electrode and has a side surface that is covered by the sealing resin, and a tip end part that is integrally formed with the base end part and that projects from a front surface of the sealing resin, by etching the main body part excluding a portion overlapping with the projection part.
Information query
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