Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16773663Application Date: 2020-01-27
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Publication No.: US10964640B2Publication Date: 2021-03-30
- Inventor: Manami Noda , Kota Kimura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/535 ; H01L29/66 ; H01L29/423 ; H01L29/16 ; H01L29/417 ; H01L29/78 ; H01L23/29 ; H01L29/739
Abstract:
A gate electrode is formed in a trench formed in a semiconductor substrate. A gate interlayer insulating film is formed to cover the gate electrode and the like. A gate interconnection and an emitter electrode are formed in contact with the gate interlayer insulating film. A glass coating film and a polyimide film are formed to cover the gate interconnection and the emitter electrode. A solder layer is formed to cover the polyimide film. The gate interconnection and the emitter electrode are each formed of a tungsten film, for example.
Public/Granted literature
- US20200161241A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-05-21
Information query
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