Invention Grant
- Patent Title: Stacked integrated circuit structure and method of forming
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Application No.: US16568938Application Date: 2019-09-12
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Publication No.: US10964667B2Publication Date: 2021-03-30
- Inventor: Wei-Ming Chen , Hsien-Pin Hu , Shang-Yun Hou , Wen-Hsin Wei
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L25/065 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/498 ; H01L25/00

Abstract:
A semiconductor device, and a method of forming the device, are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.
Public/Granted literature
- US20200035647A1 Stacked Integrated Circuit Structure and Method of Forming Public/Granted day:2020-01-30
Information query
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