A semiconductor structure includes a substrate and a first trench including a dielectric material disposed in the substrate. The first trench includes a transferred pattern of a first polymer of a directed self-assembly stack including the first polymer and a second polymer. The semiconductor structure also includes a second trench including a first vertical metal plate disposed in the substrate adjacent a first sidewall of the first trench, and a third trench including a second vertical metal plate disposed in the substrate adjacent a second sidewall of the first trench. The first vertical metal plate in the second trench, the dielectric material in the first trench, and the second vertical metal plate in the third trench provide a metal-insulator-metal vertical plate capacitor.