Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16732686Application Date: 2020-01-02
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Publication No.: US10964787B2Publication Date: 2021-03-30
- Inventor: Tsutomu Murakawa , Toshihiko Takeuchi , Hiroki Komagata , Hiromi Sawai , Yasumasa Yamane , Shota Sambonsuge , Kazuya Sugimoto , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2016-131997 20160701
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/105 ; H01L29/51 ; H01L29/66 ; H01L27/12 ; H01L29/49 ; H01L29/24 ; H01L29/788
Abstract:
A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.
Information query
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