Invention Grant
- Patent Title: Method for manufacturing light-emitting element
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Application No.: US16807853Application Date: 2020-03-03
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Publication No.: US10964841B2Publication Date: 2021-03-30
- Inventor: Naoto Inoue
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JP2019-043118 20190308
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/78 ; B23K26/53 ; B23K26/57

Abstract:
A method for manufacturing a light-emitting element includes: providing a wafer comprising: a substrate having a first surface and a second surface, and a semiconductor structure provided at the first surface; irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions, a plurality of second modified regions, and a plurality of third modified regions in the interior of the substrate; and subsequently, separating the wafer into a plurality of light-emitting elements.
Public/Granted literature
- US20200287074A1 METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT Public/Granted day:2020-09-10
Information query
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