Invention Grant
- Patent Title: Power amplifier circuit
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Application No.: US16208398Application Date: 2018-12-03
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Publication No.: US10965261B2Publication Date: 2021-03-30
- Inventor: Jeremy Dunworth , Hyunchul Park , Bon-Hyun Ku , Vladimir Aparin
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: QUALCOMM Incorporated
- Main IPC: H03F3/21
- IPC: H03F3/21 ; H03F3/195 ; H03F3/213 ; H03F1/56 ; H03F3/45 ; H03F1/02 ; H03F3/30 ; H03F3/345 ; H03F3/193 ; H03F3/24

Abstract:
The present disclosure provides an amplifier circuit that includes one or more amplifier stages, each of the one or more amplifier stages including a complementary transistor configuration. The complementary transistor configuration includes an NMOS transistor and a PMOS transistor. The NMOS transistor is electrically coupled in parallel to the PMOS transistor. The amplifier circuit further includes an output amplifier stage electrically coupled to an output of the one or more amplifier stages, the output amplifier stage including a non-complementary transistor configuration including one or more NMOS transistors or PMOS transistors.
Public/Granted literature
- US20190173439A1 POWER AMPLIFIER CIRCUIT Public/Granted day:2019-06-06
Information query
IPC分类: