Invention Grant
- Patent Title: Method for producing high-purity scandium oxide
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Application No.: US16964353Application Date: 2019-01-23
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Publication No.: US10968112B2Publication Date: 2021-04-06
- Inventor: Tatsuya Higaki , Hiroshi Kobayashi
- Applicant: SUMITOMO METAL MINING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO METAL MINING CO., LTD.
- Current Assignee: SUMITOMO METAL MINING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JPJP2018-010843 20180125
- International Application: PCT/JP2019/002012 WO 20190123
- International Announcement: WO2019/146619 WO 20190801
- Main IPC: C01F17/32
- IPC: C01F17/32 ; C22B59/00 ; C22B1/02 ; C22B3/06 ; C01F17/13 ; C22B3/42 ; C22B3/44 ; C22B3/10

Abstract:
Provided is a method for obtaining high-purity scandium oxide efficiently from a solution containing scandium. The method for producing high-purity scandium oxide of the present invention has a first firing step S12 for subjecting a solution containing scandium to oxalation treatment using oxalic acid and firing the obtained crystals of scandium oxalate at a temperature of 400 to 600° C., inclusive, a dissolution step S13 for dissolving the scandium compound obtained by firing in one or more solutions selected from hydrochloric acid and nitric acid to obtain a solution, a reprecipitation step S14 for subjecting the solution to oxalation treatment using oxalic acid and generating a reprecipitate of scandium oxalate, and a second firing step S15 for firing the reprecipitate of obtained scandium oxalate to obtain scandium oxide.
Public/Granted literature
- US20210032119A1 METHOD FOR PRODUCING HIGH-PURITY SCANDIUM OXIDE Public/Granted day:2021-02-04
Information query
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