Invention Grant
- Patent Title: Test circuits for monitoring NBTI or PBTI
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Application No.: US16023736Application Date: 2018-06-29
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Publication No.: US10969420B2Publication Date: 2021-04-06
- Inventor: Hye Jung Kwon , Seungjun Bae
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0146117 20171103
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; H03K3/03 ; G01R31/317 ; G01R31/28 ; H01L21/66

Abstract:
A test circuit includes a first logic gate that receives a test signal or a first voltage, a second logic gate that receives the test signal, a third logic gate that receives an output of the first logic gate, an output of the second logic gate, or a second voltage, a fourth logic gate that receives the output of the first logic gate or the output of the second logic gate, and a power circuit that prevents the second and fourth logic gates from being driven by supplying power to the second and fourth logic gates when the first logic gate receives the first voltage and the third logic gate receives the second voltage.
Public/Granted literature
- US20190137563A1 TEST CIRCUITS FOR MONITORING NBTI OR PBTI Public/Granted day:2019-05-09
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