Invention Grant
- Patent Title: Method of inspecting pattern defect
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Application No.: US15283466Application Date: 2016-10-03
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Publication No.: US10969428B2Publication Date: 2021-04-06
- Inventor: Young-Hoon Sohn , Chung-Sam Jun , Yu-Sin Yang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2015-0190808 20151231
- Main IPC: G01R31/302
- IPC: G01R31/302 ; G01R31/28 ; G01R31/307

Abstract:
Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.
Public/Granted literature
- US20170192052A1 METHOD OF INSPECTING PATTERN DEFECT Public/Granted day:2017-07-06
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