Invention Grant
- Patent Title: Bias generation and distribution for a large array of sensors
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Application No.: US16659686Application Date: 2019-10-22
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Publication No.: US10969816B2Publication Date: 2021-04-06
- Inventor: Sameer Wadhwa , Yi Wang , Lennart Karl-Axel Mathe
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02 ; G05F3/26 ; G06F3/041 ; G05F3/24

Abstract:
In certain aspects, a bias generation circuit comprises a bias voltage generator. The bias voltage generator has a main NMOS transistor having a drain and a gate of the main NMOS transistor both coupled to a first terminal, a main resistor having a first main resistor terminal and a second main resistor terminal, wherein the first main resistor terminal couples to a source of the main NMOS transistor; and a main PMOS transistor having a source of the main PMOS transistor coupled to the second main resistor terminal and a drain and a gate of the main PMOS transistor both coupled to a second terminal, wherein the second terminal couples to a main ground. The bias generation circuit further comprises an array of sensors coupled to the first terminal and the second terminal.
Public/Granted literature
- US20200050232A1 BIAS GENERATION AND DISTRIBUTION FOR A LARGE ARRAY OF SENSORS Public/Granted day:2020-02-13
Information query
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